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1. product profile 1.1 general description npn silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin sot223 package. the BFU590G is part of the bfu5 family of tr ansistors, suitable for small signal to medium power applications up to 2 ghz. 1.2 features and benefits ? medium power, high linearity, high breakdown voltage rf transistor ? aec-q101 qualified ? maximum stable gain 13 db at 900 mhz ? p l(1db) 21.5 dbm at 900 mhz ? 8.5 ghz f t silicon technology 1.3 applications ? automotive applications ? broadband amplifiers ? medium power amplifiers (500 mw at a frequency of 433 mhz or 866 mhz) ? large signal amplifiers for ism applications 1.4 quick reference data BFU590G npn wideband silicon rf transistor rev. 1 ? 28 april 2014 product data sheet 6 2 7 table 1. quick reference data t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - 80 200 ma p tot total power dissipation t sp ? 90 ?c [1] - - 2000 mw h fe dc current gain i c =80ma; v ce =8v 60 95 130 c c collector capacitance v cb =8v; f=1mhz - 1.9 - pf f t transition frequency i c =80ma; v ce = 8 v; f = 900 mhz - 8.5 - ghz
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 2 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor [1] t sp is the temperature at the solder point of the collector lead. [2] if k > 1 then g p(max) is the maximum power gain. if k ? 1 then g p(max) =msg. 2. pinning information 3. ordering information [1] the customer evaluation ki t contains the following: a) unpopulated rf amplifier printed-circuit board (pcb) b) unpopulated rf amplifier printed-circ uit board (pcb) with emitter degeneration c) four sma connectors for fitting unpopu lated printed-circuit board (pcb) d) bfu580g and BFU590G samples e) usb stick with data sheets, application notes, models, s-parameter and noise files 4. marking g p(max) maximum power gain i c =80ma; v ce = 8 v; f = 900 mhz [2] -13- db p l(1db) output power at 1 db gain compression i c =80ma; v ce =8v; z s =z l =50 ? ; f=900mhz - 21.5 - dbm table 1. quick reference data ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit table 2. discrete pinning pin description simplified outline graphic symbol 1emitter 2base 3emitter 4 collector pee table 3. ordering information type number package name description version BFU590G - plastic surface-mounted package with increased heatsink; 4 leads sot223 om7966 - customer evaluation kit for bfu580g and BFU590G [1] - table 4. marking type number marking BFU590G bfu590
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 3 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 5. design support 6. limiting values 7. recommended operating conditions [1] t sp is the temperature at the solder point of the collector lead. table 5. available design support download from the BFU590G product information page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads yes based on mextram device model. spice model yes based on gummel-poon device model. s-parameters yes customer evaluation kit yes see section 3 and section 10 . solder pattern yes application notes yes see section 10.1 and section 10.2 . table 6. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cb collector-base voltage open emitter - 30 v v ce collector-emitter voltage open base - 16 v shorted base - 30 v v eb emitter-base voltage open collector - 3 v i c collector current -300ma t stg storage temperature ? 65 +150 ?c v esd electrostatic discharge voltage human body model (hbm) according to jedec standard 22-a114e - ? 250 v charged device model (cdm) according to jedec standard 22-c101b - ? 2kv table 7. characteristics symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - - 200 ma p i input power z s = 50 ? --20dbm t j junction temperature ? 40 - +150 ?c p tot total power dissipation t sp ? 90 ?c [1] --2000mw
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 4 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 8. thermal characteristics [1] t sp is the temperature at the solder point of the collector lead. t sp has the following relation to the ambient temperature t amb : t sp =t amb +p? r th(sp-a) with p being the power dissipation and r th(sp-a) being the thermal resistance between the solder point and ambient. r th(sp-a) is determined by the heat transfer properties in the application. the heat transfer properties are set by the appl ication board materials, the board layout and the environment e.g. housing. 9. characteristics table 8. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point [1] 30 k/w fig 1. power derating curve ddd 7 vs ?& 3 wrw wrw 3 wrw p: p: p: table 9. characteristics t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c = 100 na; i e =0ma 24 - - v v (br)ceo collector-emitter breakdown voltage i c = 150 na; i b =0ma 12 - - v i c collector current - 80 200 ma i cbo collector-base cut-off current i e =0ma; v cb =8v - <1 - na h fe dc current gain i c =80ma; v ce = 8 v 60 95 130 c e emitter capacitance v eb = 0.5 v; f = 1 mhz - 3.9 - pf c re feedback capacitance v ce = 8 v; f = 1 mhz - 1.1 - pf c c collector capacitance v cb = 8 v; f = 1 mhz - 1.9 - pf f t transition frequency i c =50ma; v ce = 8 v; f = 900 mhz - 8.5 - ghz
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 5 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor g p(max) maximum power gain f = 433 mhz; v ce =8v [1] i c = 10 ma - 18.5 - db i c = 50 ma - 19.5 - db i c = 80 ma - 19.5 - db f = 900 mhz; v ce =8v [1] i c = 10 ma - 13.5 - db i c =50ma - 13 - db i c =80ma - 13 - db f = 1800 mhz; v ce =8v [1] i c =10ma - 8 - db i c =50ma - 8 - db i c =80ma - 8 - db ?s 21 ? 2 insertion power gain f = 433 mhz; v ce =8v i c =10ma - 16 - db i c = 50 ma - 17.5 - db i c = 80 ma - 17.5 - db f = 900 mhz; v ce =8v i c =10ma - 10 - db i c =50ma - 11 - db i c =80ma - 11 - db f = 1800 mhz; v ce =8v i c = 10 ma - 4.5 - db i c = 50 ma - 5.5 - db i c = 80 ma - 5.5 - db p l(1db) output power at 1 db gain compression f = 433 mhz; v ce =8v; z s =z l =50 ? i c =50ma - 20 - dbm i c = 80 ma - 22.5 - dbm f = 900 mhz; v ce =8v; z s =z l =50 ? i c = 50 ma - 19.5 - dbm i c = 80 ma - 21.5 - dbm f = 1800 mhz; v ce =8v; z s =z l =50 ? i c = 50 ma - 18.5 - dbm i c =80ma - 21 - dbm table 9. characteristics ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 6 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor [1] if k > 1 then g p(max) is the maximum power gain. if k ? 1 then g p(max) =msg. 9.1 graphs ip3 o output third-order intercept point f 1 = 433 mhz; f 2 = 434 mhz; v ce =8v; z s =z l =50 ? i c = 50 ma - 29.5 - dbm i c =80ma - 32 - dbm f 1 = 900 mhz; f 2 = 901 mhz; v ce =8v; z s =z l =50 ? i c =50ma - 29 - dbm i c =80ma - 31 - dbm f 1 = 1800 mhz; f 2 =1801mhz; v ce =8v; z s =z l =50 ? i c =50ma - 28 - dbm i c = 80 ma - 30.5 - dbm table 9. characteristics ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit t amb =25 ? c. (1) i b =25 ? a (2) i b =75 ? a (3) i b = 125 ? a (4) i b = 175 ? a (5) i b = 225 ? a (6) i b = 275 ? a (7) i b = 325 ? a fig 2. collector current as a function of collector-emitter voltage; typical values ddd 9 &( 9 , & , & p$ p$ p$
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 7 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor t amb =25 ? c. (1) v ce =3.0v (2) v ce =8.0v v ce =8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +125 ? c fig 3. dc current gain as a function of collector current; typical values fig 4. dc current gain as a function of collector current; typical values t amb =25 ? c. (1) v ce =3.0v (2) v ce =8.0v t amb =25 ? c. (1) v ce =3.0v (2) v ce =8.0v fig 5. collector current as a function of base-emitter voltage; typical values fig 6. base current as a function of base-emitter voltage; typical values ddd , & p$ k )( )( k )( ddd , & p$ k )( )( k )( ddd 9 %( 9 , & , & p$ p$ p$ ddd 9 %( 9 , % , % p$ p$ p$
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 8 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor v ce =3v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +125 ? c i c = 0 ma; f = 1 mhz; t amb =25 ? c. fig 7. reverse base current as a function of emitter-base voltage; typical values fig 8. collector capacitance as a function of collector-base voltage; typical values t amb =25 ? c. (1) v ce =3.3v (2) v ce =5.0v (3) v ce =8.0v (4) v ce = 12.0 v fig 9. transition frequency as a functi on of collector current; typical values ddd 9 (% 9 , %5 %5 , %5 $ $ $ ddd 9 &% 9 & f & f s) s) s) ddd , & p$ i 7 i 7 *+] *+] *+]
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 9 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor i c =50ma; v ce =8v; t amb =25 ? c. i c =80ma; v ce =8v; t amb =25 ? c. fig 10. gain as a function of frequency; typical values fi g 11. gain as a function of frequency; typical values v ce =8v; t amb =25 ? c. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz v ce =8v; t amb =25 ? c. if k >1 then g p(max) = maximum power gain. if k < 1 then g p(max) = msg. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz fig 12. insertion power gain as a function of collector current; typical values fig 13. maximum power gain as a function of collector current; typical values ddd i0+] * * g% g% g% _v _v _ _v _ 06* 06* 06* * spd[ spd[ * spd[ 06* 06* 06* ddd i0+] * * g% g% g% _v _v _ _v _ 06* 06* 06* * spd[ spd[ * spd[ 06* 06* 06* ddd , & p$ _v _v _ _v _ g% g% g% ddd , & p$ * spd[ spd[ * spd[ g% g% g%
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 10 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor i c =50ma; t amb =25 ? c. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz i c =80ma; t amb =25 ? c. if k >1 then g p(max) = maximum power gain. if k < 1 then g p(max) = msg. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz fig 14. insertion power gain as a function of collector-emitter voltage; typical values fig 15. maximum power gain as a function of collector-emitter voltage; typical values ddd 9 &( 9 _v _v _ _v _ g% g% g% ddd 9 &( 9 * spd[ spd[ * spd[ g% g% g%
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 11 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor v ce = 8 v; 40 mhz ? f ? 3 ghz. (1) i c = 50 ma (2) i c = 80 ma fig 16. input reflection coefficient (s 11 ); typical values v ce = 8 v; 40 mhz ? f ? 3 ghz. (1) i c = 50 ma (2) i c = 80 ma fig 17. output reflection coefficient (s 22 ); typical values ? ddd ? ddd
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 12 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor v ce =8v; t amb =25 ? c. (1) f 1 = 433 mhz; f 2 = 434 mhz (2) f 1 = 900 mhz; f 2 = 901 mhz (3) f 1 = 1800 mhz; f 2 = 1801 mhz v ce =8v; t amb =25 ? c. (1) f = 433 mhz (2) f = 900 mhz (3) f = 1800 mhz fig 18. output third-order intercept point as a function of collector current; typical values fig 19. output power at 1 db gain compression as a function of collector current; typical values i c = 80 ma; t amb =25 ? c. (1) f 1 = 433 mhz; f 2 = 434 mhz (2) f 1 = 900 mhz; f 2 = 901 mhz (3) f 1 = 1800 mhz; f 2 = 1801 mhz i c =80 ma; t amb =25 ? c. (1) f = 433 mhz (2) f = 900 mhz (3) f = 1800 mhz fig 20. output third-order intercept point as a function of collector-emitter voltage; typical values fig 21. output power at 1 db gain compression as a function of collector-emitter voltage; typical values ddd , & p$ ,3 ,3 r ,3 r g%p g%p g%p ddd , & p$ 3 /g% /g% 3 /g% g%p g%p g%p ddd 9 &( 9 ,3 ,3 r ,3 r g%p g%p g%p ddd 9 &( 9 3 /g% /g% 3 /g% g%p g%p g%p
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 13 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 10. application information more information about the following applicat ion example can be found in the application notes. see section 5 ? design support ? . the following application example can be im plemented using the evaluation kit. see section 3 ? ordering information ? for the order type number. the following application example can be simulated using the simulation package. see section 5 ? design support ? . 10.1 application example: 433 mhz pa more detailed information of the application example can be found in the application note: an11503. remark: fine tuning of components maybe required depending on pcb parasitics. fig 22. schematic 433 mhz power amplifier table 10. application performance data at 433 mhz i cc = 100 ma; v cc = 8 v symbol parameter conditions min typ max unit ?s 21 ? 2 insertion power gain - 15 - db ?s 11 ? 2 input return loss - ? 7- db p l(1db) output power at 1 db gain compression - 26 - dbm ? c collector efficiency - 60 - % ddd s) q) ?) 9 && 9 s) s) s) s) s) 5)lqsxw 60$ 5)rxwsxw 60$ q+ q+ '87 9 %% 9 q+ q+ q+
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 14 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 10.2 application example: 866 mhz pa more detailed information of the application example can be found in the application note: an11501. remark: fine tuning of components maybe required depending on pcb parasitics. fig 23. schematic 866 mhz power amplifier table 11. application performance data at 866 mhz i cc = 100 ma; v cc = 8 v symbol parameter conditions min typ max unit ?s 21 ? 2 insertion power gain - 10 - db ?s 11 ? 2 input return loss - ? 12 - db p l(1db) output power at 1 db gain compression - 27 - dbm ? c collector efficiency - 55 - % ddd s) q) ?) 9 && 9 s) s) s) s) 5)lqsxw 60$ 5)rxwsxw 60$ q+ q+ '87 9 %% 9 q+ q+ q+
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 15 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 11. package outline fig 24. package outline sot223 81,7 $ e s f'( h + ( / s 4\ zy 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ pp e h ',0(16,216ppduhwkhruljlqdoglphqvlrqv 627 6& z 0 e s ' e h h $ $ / s 4 ghwdlo; + ( ( y 0 $ $ % % f \ p p vfdoh $ ; 3odvwlfvxuidfhprxqwhgsdfndjhzlwklqfuhdvhgkhdwvlqnohdg v 627
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 16 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 12. handling information 13. abbreviations 14. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 12. abbreviations acronym description aec automotive electronics council ism industrial, scientific and medical lna low-noise amplifier msg maximum stable gain npn negative-positive-negative pa power amplifier sma subminiature version a table 13. revision history document id release date data sheet status change notice supersedes BFU590G v.1 20140428 product data sheet - -
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 17 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor 15. legal information 15.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 15.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 15.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BFU590G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 18 of 19 nxp semiconductors BFU590G npn wideband silicon rf transistor no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 16. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BFU590G npn wideband silicon rf transistor ? nxp semiconductors n.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 28 april 2014 document identifier: BFU590G please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 17. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 design support . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 recommended operating conditions. . . . . . . . 3 8 thermal characteristics . . . . . . . . . . . . . . . . . . 4 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 9.1 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 application information. . . . . . . . . . . . . . . . . . 13 10.1 application example: 433 mhz pa . . . . . . . . . 13 10.2 application example: 866 mhz pa . . . . . . . . . 14 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 12 handling information. . . . . . . . . . . . . . . . . . . . 16 13 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 15 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 15.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 15.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 16 contact information. . . . . . . . . . . . . . . . . . . . . 18 17 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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